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TIP120 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

General Description

·High DC Current Gain- : hFE = 1000(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 3A = 4.0V(Max)@ IC= 5A ·Complement to Type TIP125 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current Collector Power Dissipation PC TC=25℃ Collector Power Dissipation Ta=25℃ Tj Junction Temperature 120 mA 65 W 2 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.92 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website: www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor TIP120 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A ,IB= 12mA 2.0 V VCE(sat)-2 Collector-Emitter Saturation voltage IC= 5A ,IB= 20mA 4.0 V VBE(on) Base-Emitter On Voltage IC= 3.0A ;

Overview

isc Silicon NPN Darlington Power Transistor TIP120.