isc Silicon NPN Darlington Power Transistor
TIP120
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0
60
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A ,IB= 12mA
2.0
V
VCE(sat)-2 Collector-Emitter Saturation voltage IC= 5A ,IB= 20mA
4.0
V
VBE(on)
Base-Emitter On Voltage
IC= 3.0A ; VCE= 3V
2.5
V
ICBO
Collector Cutoff Current
VCB= 60V, IE= 0
0.2 mA
ICEO
Collector Cutoff Current
VCE= 30V, IB= 0
0.5 mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
2
mA
hFE-1
DC Current Gain
IC= 0.5A; VCE= 3V
1000
hFE-2
DC Current Gain
IC= 3.0A; VCE= 3V
1000
COB
Output Capacitance
IE= 0; VCB= 10V, f= 0.1MHz
200 pF
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notification. The information contained herein is presented only as a guide for the applications of
our products.
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