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TIP127B Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Darlington Power Transistor.

General Description

·High DC Current Gain- : hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -3A = -4.0V(Max)@ IC= -5A ·Complement to Type TIP122B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -8 A IB Base Current-DC Collector Power Dissipation PC TC=25℃ Collector Power Dissipation Ta=25℃ Tj Junction Temperature -120 mA 65 W 2 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.92 UNIT ℃/W TIP127B isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor TIP127B ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA, IB= 0 -100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A ,IB= -12mA -2.0 V VCE(sat)-2 Collector-Emitter Saturation voltage IC= -5A ,IB= -20mA -4.0 V VBE(on) Base-Emitter On Voltage IC= -3.0A ;

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