900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






INCHANGE

TIP150 Datasheet Preview

TIP150 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Darlington Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min.)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max.)@ IC= 5A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in automotive ignition,switching and motor
control applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
10
A
IB
Base Current- Continuous
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
1.5
A
80
W
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.56 /W
TIP150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

TIP150 Datasheet Preview

TIP150 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Darlington Power Transistor
TIP150
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA, IB= 0
300
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1.0mA, IE= 0
300
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A, IB= 10mA
1.5
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A, IB= 100mA
1.5
V
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 5A, IB= 250mA
2.0
V
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 2A, IB= 100mA
2.2
V
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 5A, IB= 250mA
2.3
V
VF
C-E Diode Forward Voltage
IF= 7A
3.5
V
ICEO
Collector Cutoff current
VCE= 300V, IB= 0
0.25 mA
IEBO
Emitter Cutoff Current
VEB= 8V; IC= 0
15
mA
hFE-1
DC Current Gain
IC= 2.5A; VCE= 5V
150
hFE-2
DC Current Gain
IC= 5A; VCE= 5V
50
hFE-3
DC Current Gain
IC= 7A; VCE= 5V
15
COB
Collector Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
150 pF
Switching Times
td
Delay Time
0.03
μs
tr
Rise Time
tstg
Storage Time
VCC = 250V, IC = 5.0 A,
0.18
μs
IB1= -IB2= 250mA; tp= 20μs
Duty Cycle2%
3.5
μs
tf
Fall Time
1.6
μs
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number TIP150
Description NPN Transistor
Maker INCHANGE
Total Page 3 Pages
PDF Download

TIP150 Datasheet PDF





Similar Datasheet

1 TIP150 NPN SILICON POWER DARLINGTONS
Power Innovations Limited
2 TIP150 NPN Transistor
INCHANGE
3 TIP150 (TIP150 - TIP152) SILICON POWER TRANSISTOR
SavantIC
4 TIP150 Silicon NPN Power Transistors
Comset Semiconductors
5 TIP150 Silicon NPN Power Darlington Transistor
NTE
6 TIP151 NPN SILICON POWER DARLINGTONS
Power Innovations Limited
7 TIP151 (TIP150 - TIP152) SILICON POWER TRANSISTOR
SavantIC
8 TIP151 Silicon NPN Power Darlington Transistor
NTE
9 TIP152 NPN SILICON POWER DARLINGTONS
Power Innovations Limited





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy