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TIP150 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Darlington Power Transistor.

General Description

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in automotive ignition,switching and motor control applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1.5 A 80 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.56 ℃/W TIP150 isc website:.iscsemi.

1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor TIP150 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

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