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TIP160 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

General Description

·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 320V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE (sat)= 2.9V(Max.)@ IC= 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in automotive ignition, switching and motor control applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 320 V VCEO Collector-Emitter Voltage 320 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1.0 A 125 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6.5A,IB= 0.1A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A, IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 6.5A,IB= 0.1A ICEO Collector Cutoff current VCE= 320V, IB= 0 IEBO Emitter Cutoff Current VEB= 5V;

IC= 0 hFE DC Current Gain IC= 4A;

Overview

isc Silicon NPN Darlington Power Transistor TIP160.