Datasheet Details
| Part number | TIP35AT |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.33 KB |
| Description | NPN Transistor |
| Datasheet | TIP35AT-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | TIP35AT |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.33 KB |
| Description | NPN Transistor |
| Datasheet | TIP35AT-INCHANGE.pdf |
|
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·DC Current Gain- : hFE= 25(Min)@IC = 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 25 A ICM Collector Current-peak 40 A IB Base Current 5 A PC Collector Power Dissipation@ TC=25℃ 100 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.25 UNIT ℃/W TIP35AT isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A;
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|---|---|---|---|
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TIP35A | Silicon NPN Transistor | NTE |
| Part Number | Description |
|---|---|
| TIP35A | NPN Transistor |
| TIP35AB | NPN Transistor |
| TIP35AF | NPN Transistor |
| TIP35 | NPN Transistor |
| TIP35B | NPN Transistor |
| TIP35C | NPN Transistor |
| TIP35D | NPN Transistor |
| TIP30 | PNP Transistor |
| TIP3055 | NPN Transistor |
| TIP3055F | NPN Transistor |