TK40J60U
Key Features
- Low drain-source on-resistance: RDS(ON) = 0.065Ω (typ.)
- Easy to control Gate switching
- Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA)
- Low leakage current: IDSS = 100 µA (max) (VDS = 600 V)
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor TK40J60U
