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TK65G10N1 - N-Channel MOSFET

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INCHANGE

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TK65G10N1 N-Channel MOSFET by INCHANGE - Datasheet Preview — Datasheet preview – TK65G10N1

Datasheet Details

Part number	TK65G10N1
Manufacturer	INCHANGE
File Size	255.16 KB
Description	N-Channel MOSFET
Datasheet	TK65G10N1 Datasheet
Additional preview pages of the TK65G10N1 datasheet.

Product details

Features

Low drain-source on-resistance: RDS(on) ≤4.5mΩ. (VGS = 10 V).
Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Nov 9, 2020 |