Datasheet Details
| Part number | TL142 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.71 KB |
| Description | NPN Transistor |
| Datasheet |
 TL142 Datasheet
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| Part number | TL142 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.71 KB |
| Description | NPN Transistor |
| Datasheet |
TL142 Datasheet
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·High DC Current Gain- : hFE = 1000(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 0.5 A 125 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 35.7 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor TL142 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)* Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 VCE(sat)-1* Collector-Emitter Saturation Voltage IC= 5A ,IB= 10mA VCE(sat)-2* Collector-Emitter Saturation Voltage IC= 10A ,IB= 40mA VBE(sat)* Base-Emitter Saturation Voltage IC= 10A ,IB= 40mA VBE(on)* Base-Emitter On Voltage IC= 10A ;
VCE= 4V ICBO Collector Cutoff current VCB= 100V, IE= 0 ICEO Collector Cutoff current VCE= 50V, IB= 0 IEBO Emitter Cutoff Current VEB= 5V;
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor TL142.
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