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TSSD10L200SW - Schottky Barrier Rectifier

Key Features

  • Low Forward Voltage.
  • High Frequency.
  • Extremely low reverse leakage.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription (Reference)

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Schottky Barrier Rectifier INCHANGE Semiconductor TSSD10L200SW FEATURES ·Low Forward Voltage ·High Frequency ·Extremely low reverse leakage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching mode power supplies ·Lighting application ·DC/DC Converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak Repetitive Reverse Voltage DC Blocking Voltage 200 V IF(AV) IFSM TJ Average Rectified Forward Current 10 A Non-repetitive Peak Surge Current (8.3ms single half sine-wave superimposed 200 A on rated load per diode) Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.