Datasheet Details
| Part number | TTC0001 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.77 KB |
| Description | NPN Transistor |
| Datasheet |
 TTC0001 Datasheet
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| Part number | TTC0001 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.77 KB |
| Description | NPN Transistor |
| Datasheet |
TTC0001 Datasheet
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·Low Collector Saturation Voltage ·Good Linearity of hFE ·Complement to Type TTA0001 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 18 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 9 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ TTC0001 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TTC0001 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ;
IB= 0 160 V VCE(sat) Collector-Emitter Saturation Voltage IC= 9A;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
TTC0001 | NPN Transistor | Toshiba |
| Part Number | Description |
|---|---|
| TTC3710B | NPN Transistor |
| TTC5200 | NPN Transistor |