Datasheet Details
| Part number | TTD1409B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.82 KB |
| Description | NPN Transistor |
| Datasheet |
 TTD1409B Datasheet
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| Part number | TTD1409B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.82 KB |
| Description | NPN Transistor |
| Datasheet |
TTD1409B Datasheet
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·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 400V(Min) ·High DC Current Gain— : hFE = 600(Min) @ IC= 2A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use high-voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB Base Current-Continuous Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range 1 A 2 W 25 150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor TTD1409B ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 3mA;
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
| Part Number | Description |
|---|---|
| TTD1410 | NPN Transistor |
| TTD1415 | NPN Transistor |
| TTD1415B | Silicon NPN Power Transistor |