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TTD1409B - NPN Transistor

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Datasheet Details

Part number TTD1409B
Manufacturer INCHANGE
File Size 197.82 KB
Description NPN Transistor
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TTD1409B Product details

Description

Collector Emitter Breakdown Voltage : V(BR)CEO = 400V(Min) High DC Current Gain : hFE = 600(Min) @ IC= 2A 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use high-voltage switching applications.

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