Datasheet4U Logo Datasheet4U.com

BUX33 Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

General Description

· Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX VCEV Collector-Emitter Voltage VBE= 1.5V 800 VCER Collector-Emitter Voltage RBE= 10Ω 800 VCEX Collector-Emitter Voltage VBE= -1.5V 450 VCEO Collector-Emitter Voltage 400 UNIT V V V V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 15 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 150 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;

IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A;

IB= 2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A;

Overview

isc Silicon NPN Power Transistor BUX33.