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Infineon Technologies Electronic Components Datasheet

BSS131 Datasheet

SIPMOS Small-Signal-Transistor

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Type
SIPMOS® Small-Signal-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic level
• dv /dt rated
Product Summary
V DS
R DS(on),max
ID
BSS131
240 V
14
0.1 A
SOT-23
Type
BSS131
BSS131
Package
SOT23
SOT23
Ordering Code
Q62702-S565
Q67000-S229
Tape and Reel Information
E6327
E6433
Marking
SRs
SRs
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
ID
I D,pulse
T A=25 °C
T A=70 °C
T A=25 °C
Value
0.11
0.09
0.4
Reverse diode dv /dt
dv /dt
I D=0.1 A, V DS=192 V,
di /dt =200 A/µs,
T j,max=150 °C
6
Gate source voltage
V GS
ESD sensitivity (HBM) as per
MIL-STD 883
Power dissipation
P tot T A=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
±20
Class 1
0.36
-55 ... 150
55/150/56
Unit
A
kV/µs
V
W
°C
Rev. 2.0
page 1
2004-04-29


Infineon Technologies Electronic Components Datasheet

BSS131 Datasheet

SIPMOS Small-Signal-Transistor

No Preview Available !

Parameter
Thermal characteristics
Thermal resistance,
junction - minimal footprint
Symbol Conditions
R thJA
BSS131
min.
Values
typ.
Unit
max.
- - 350 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
Gate-source leakage current
V (BR)DSS V GS=0 V, I D=250 µA
V GS(th) V DS=0 V, I D=56 µA
I D (off)
V DS=240 V, V GS=0 V,
T j=25 °C
I GSS
V DS=240 V, V GS=0 V,
T j=150 °C
V GS=20 V, V DS=0 V
240
0.8
-
-
-
Drain-source on-state resistance
R DS(on) V GS=4.5 V, I D=0.09 A
-
Transconductance
V GS=10 V, I D=0.1 A
-
g fs
|V DS|>2|I D|R DS(on)max,
I D=0.08 A
0.06
-
1.4
-
-
-
9.07
7.7
0.13
-V
1.8
0.01 µA
5
10 nA
20
14
-S
Rev. 2.0
page 2
2004-04-29


Part Number BSS131
Description SIPMOS Small-Signal-Transistor
Maker INFINEON
Total Page 9 Pages
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