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IGW60N60F Datasheet Preview

IGW60N60F Datasheet

MOSFET

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IGW60N60F
General Description
Using advanced IGBT technology, the 600V IGBT.
Offers superior conduction and switching performances.
Lead Free Package and Finish
VCES
600V
VCE(sat)
2.2V
IC
60A
Features:
Low saturation voltage: VCE(sat),typ=2.2V @IC=60A,VGE=15V;
RoHS Compliant;
Applications:
Inverter welder
Solar inverters
UPS
High switching frequency inverter
Ordering Information
Part Number
Package
IGW60N60F
TO-3P
Brand
IPS
Absolute Maximum RatingsTa= 25℃,unless otherwise specified
Symbol
Parameter
Rating
Units
VCES Collector-Emitter Voltage
600
VGES Gate- Emitter Voltage
±20
IC
ICMa1
IF
Collector Current
Collector Current
@TC=100
Pulsed Collector Current @TC=25
Diode Continuous Forward Current@TC=100
120
60
180
30
IFM Diode Maximum Forward Current
Power Dissipation
@TC=25
100
300
PD Power Dissipation
Power Dissipation
@TC=100
@TA=25
120
3.125
TJ Operating Junction
Tstg Storage Temperature Range
150
-55150
TL Maximum Temperature for Soldering
300
a1Repetitive rating; pulse width limited by maximum junction temperature
V
V
A
A
A
A
W
©2016 InPower Semiconductor Co., Ltd.
Page 1 of 6
IGW60N60F REV. A. Mar. 2016




IPS

IGW60N60F Datasheet Preview

IGW60N60F Datasheet

MOSFET

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Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance, Junction to case for IGBT
RθJC Thermal Resistance, Junction to case for Diode
RθJA Thermal Resistance, Junction to Ambient
IGW60N60F
Typ. Max.
-- 0.416
-- 0.80
-- 40
Units
/W
/W
/W
Electrical Characteristics of the IGBT (Ta= 25, unless otherwise specified)
Symbol
Parameter
Test Conditions
Rating
Min Typ. Max.
OFF Characteristics
V(BR)CES Collector-Emitter Breakdown Voltage
ICES Collector-Emitter Leakage Current
IGES(F) Gate to Emitter Forward Leakage
IGES(R) Gate to Source Reverse Leakage
ON Characteristics
VGE=0V,ICE=250uA
VGE=0V,VCE=600V
VGE=+20V
VGE =-20V
600
--
--
--
-- --
-- 1.0
-- +250
-- -250
VCE(sat) Collector-Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
Pulse width tp≤380µs,δ≤2%
IC=60A ,VGE=15V
IC=1mA ,VCE=VGE
-- 2.2 2.9
3.5 5.0 6.5
Dynamic Characteristics
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Switching Characteristics
VCE=30V,VGE=0V
f=1MHz
-- 2890 --
-- 310 --
-- 70 --
td(on) Turn-on Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
Ets Total Switching Loss
Qg Total Gate Charge
Qge Gate to Emitter Charge
Qgc Gate to Collector Charge
Electrical Characteristics of the Diode
VCE=400V,IC=60A,
Rg=10Ω,VGE=15V,
Inductive Load,
Ta=25℃,
VCE=400V,IC=60A,
VGE=15V,
-- 52 --
-- 110 --
-- 175 --
-- 45 --
-- 3.83 --
-- 1.13 --
-- 4.96 --
-- 150 --
-- 30 --
-- 74 --
VF Diode Forward Voltage
IF=30A
Trr Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
IF=20A
di/dt=200A/uS
Qrr Reverse Recovery Charge
-- 1.8 2.6
-- 90 --
-- 7.2 --
-- 326 --
Units
V
mA
nA
nA
V
V
pF
ns
mJ
nC
V
ns
A
nC
©2016 InPower Semiconductor Co., Ltd.
Page 2 of 6
IGW60N60F REV. A. Mar. 2016


Part Number IGW60N60F
Description MOSFET
Maker IPS
Total Page 6 Pages
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