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IP Semiconductor

IPS1225-40B Datasheet Preview

IPS1225-40B Datasheet

Silicon Controlled Rectifiers

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IP Semiconductor Co., Ltd.
IPS1225-xxB
IPS1225 series of silicon controlled rectifiers are
specifically designed for medium power switching and
phase control applications.
High current density due to double mesa echnology;
SIPOS and Glass passivation technology used has reliable
operation up to 125junction temperature. Low Igt parts
available.
Typical applications are in rectification (softstart) and
these products are designed to be used with international
recetifier input diodes, switches and output recetifiers
which are available in identical package outlines.
MAIN FEATURES
Symbol
Value
Unit
IT(RMS)
VDRM / VRRM
VTM
25
1200
≤ 1.6
A
V
V
TO-220B
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol Value
RMS onstate current (Tc = 110, 180º conduction half sine wave)
Average onstate current (Tc = 110, 180º conduction half sine wave)
IT(RMS)
IT(AV)
25
16
Storage Junction Temperature Range
Operating Junction Temperature Range
Repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Tj = 25
Tj = 25
Non Repetitive Peak Off-state Voltage
Non Repetitive Peak Reverse Voltage
Tj = 25
Tj = 25
Tstg
Tj
VDRM
VRRM
VDSM
VRSM
-40 to +150
-40 to +125
1200
1200
1300
1300
One cycle Non Repetitive surge current, 10ms sine pulse, rated VRRM
applied
One cycle Non Repetitive surge current, 10ms sine pulse, no voltage
applied
ITSM
250
260
I²t Value for fusing, 10ms sine pulse, rated VRRM applied
I²t Value for fusing, 10ms sine pulse, no voltage applied
Critical rate of rise of turned on current (IG = 2 X IGT, Tj = 125)
I²t
dI/dt
310
320
100
Peak gate current
tp = 20us, Tj = 125
IGM 4
Average gate power dissipation
Tj = 125
PG(AV)
1
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
Unit
A
A
V
V
A
A²s
A/us
A
W
1




IP Semiconductor

IPS1225-40B Datasheet Preview

IPS1225-40B Datasheet

Silicon Controlled Rectifiers

No Preview Available !

IPS1225-xxB
ELECTRICAL CHARACTERISTICS (Tj = 25 unless otherwise specified)
Symbol
Test Condition
IGT
VGT
VGD
IL
IH
dV/dt
Required DC gate current to trigger at 25
at - 40
at 125
MAX
Required DC voltage to trigger
at 25
(anode supply = 6V, resistive load) at - 40
at 125
MAX
DC gate voltage not to trigger
(Tj = 125, VDRM = rated value)
MAX
IG = 1.2 IGT
MAX
Holding current
VD = 67% VDRM gate open Tj = 125
MAX
MIN
IPS1225-xxB
40
40
100
15
1.5
2.5
1.0
0.2
80
60
500
Unit
mA
V
V
mA
mA
V/us
STATIC CHARACTERISTICS
Symbol
Test Conditions
VTM
IDRM / IRRM
ITM = 50A, tp = 380uS
VD = VDRM
VR = VRRM
Tj = 25
Tj = 25
Tj = 125
Value
(MAX)
1.6
10
4
Unit
V
uA
mA
THERMAL RESISTANCES
Symbol
Rth (j c)
Parameter
Junction to case for DC TO-220B
Value
1.0
Unit
/W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
2


Part Number IPS1225-40B
Description Silicon Controlled Rectifiers
Maker IP Semiconductor
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IPS1225-40B Datasheet PDF






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