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AUIRGU4045D - INSULATED GATE BIPOLAR TRANSISTOR

This page provides the datasheet information for the AUIRGU4045D, a member of the AUIRGR4045D INSULATED GATE BIPOLAR TRANSISTOR family.

Features

  • Low VCE (on) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA Square RBSOA 100% of the parts tested for ILM Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free, RoHS Compliant Automotive Qualified.
  • G AUIRGR4045D AUIRGU4045D C PD - 97637 VCES = 600V IC = 6.0A, TC = 10.

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Datasheet Details

Part number AUIRGU4045D
Manufacturer IRF
File Size 576.52 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet AUIRGU4045D Datasheet
Additional preview pages of the AUIRGU4045D datasheet.

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Full PDF Text Transcription

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AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • • Low VCE (on) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA Square RBSOA 100% of the parts tested for ILM Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free, RoHS Compliant Automotive Qualified* G AUIRGR4045D AUIRGU4045D C PD - 97637 VCES = 600V IC = 6.0A, TC = 100°C VCE(on) typ. = 1.
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