F1404ZS - Power MOSFET

IRF

F1404ZS power mosfet by IRF - Datasheet Preview

Datasheet Details

Part number	F1404ZS
Manufacturer	IRF
File Size	307.34 KB
Description	Power MOSFET
Datasheet	F1404ZS Datasheet

General Description

S ID = 75A Absolute Maximum Ratings Parameter TO-220AB IRF1404Z D2Pak IRF1404ZS Max.

190 130 75 750 220 TO-262 IRF1404ZL Units A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current IDM PD @TC = 25°C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS (Thermally limited) Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value EAS (Tested ) W W/°C V mJ A mJ d 1.5 ± 20 IAR EAR TJ TSTG Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Ã h 320 480 See Fig.12a, 12b, 15, 16 -55 to + 175 g i °C 300 (1.6mm from case ) 10 lbf in (1.1N m) Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat Greased Surface Junction-to-Ambient y y Typ.

Max.

Overview

PD - 94634B IRF1404Z IRF1404ZS IRF1404ZL.

Key Features

l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G HEXFET® Power MOSFET D VDSS = 40V RDS(on) = 3.7mΩ This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make t.

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