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International Rectifier Electronic Components Datasheet

IRFP22N50APBF Datasheet

Power MOSFET

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PD - 95004
IRFP22N50APbF
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l UninterruptIble Power Supply
l High Speed Power Switching
l Lead-Free
VDSS
500V
RDS(on) max
0.23
ID
22A
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
VGS
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Typical SMPS Topologies
l Full Bridge Converters
l Power Factor Correction Boost
Notes  through … are on page 8
www.irf.com
Max.
22
14
88
277
2.2
± 30
4.8
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
1
2/11/04
Free Datasheet http://www.Datasheet4U.com


International Rectifier Electronic Components Datasheet

IRFP22N50APBF Datasheet

Power MOSFET

No Preview Available !

IRFP22N50APbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
500 ––– –––
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.55 –––
RDS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.23
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0
IDSS Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100
––– ––– -100
Dynamic @ TJ = 25°C (unless otherwise specified)
V
V/°C
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA†
VGS = 10V, ID = 13A „
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
VGS = 30V
VGS = -30V
Parameter
Min. Typ. Max. Units
Conditions
gfs Forward Transconductance
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance
Avalanche Characteristics
12 ––– –––
––– ––– 120
––– ––– 32
––– ––– 52
––– 26 –––
––– 94 –––
––– 47 –––
––– 47 –––
––– 3450 –––
––– 513 –––
––– 27 –––
––– 4935 –––
––– 137 –––
––– 264 –––
S VDS = 50V, ID = 13A
ID = 22A
nC VDS = 400V
VGS = 10V, See Fig. 6 and 13 „
VDD = 250V
ns ID = 22A
RG = 4.3
RD = 11,See Fig. 10 „
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 400V …
Parameter
EAS Single Pulse Avalanche Energy‚
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Thermal Resistance
Typ.
–––
–––
–––
Max.
1180
22
28
Units
mJ
A
mJ
Parameter
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface
RθJA
Junction-to-Ambient
Diode Characteristics
Typ.
–––
0.24
–––
Max.
0.45
–––
40
Units
°C/W
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
2
Min. Typ. Max. Units
Conditions
––– ––– 22
––– ––– 88
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.5
––– 570 850
––– 6.1 9.2
V TJ = 25°C, IS = 22A, VGS = 0V „
ns TJ = 25°C, IF = 22A
µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com
Free Datasheet http://www.Datasheet4U.com


Part Number IRFP22N50APBF
Description Power MOSFET
Maker IRF
Total Page 8 Pages
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