IRFSL38N20D mosfet equivalent, power mosfet.
Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET.
High frequency DC-DC converters
VDSS
200V
RDS(on) max
0.054Ω
ID
44A
Benefits Low Gate-to-Drain Charge to Reduce Swit.
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