JANSR2N7423 Datasheet RADIATION HARDENED POWER MOSFET

Manufacturer: IRF

JANSR2N7423 radiation hardened power mosfet by IRF - Datasheet Preview

Datasheet Details

Part number	JANSR2N7423
Manufacturer	IRF
File Size	160.70 KB
Description	RADIATION HARDENED POWER MOSFET
Download	JANSR2N7423 Download (PDF)

Overview

PD-91299E RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) Product Summary Part Number IRHM9250 IRHM93250 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on) 0.315Ω 0.315Ω IRHM9250 JANSR2N7423 200V, P-CHANNEL REF: MIL-PRF-19500/662 RAD-Hard HEXFET TECHNOLOGY ™ ® ID QPL Part Number -14A JANSR2N7423 -14A JANSF2N7423 International Rectifier’s RAD-Hard HEXFET ® technology provides high performance power MOSFETs for space applications.

This technology has over a decade of proven performance and reliability in satellite applications.

These devices have been characterized for both Total Dose and Single Event Effects (SEE).

Key Features

n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight n ESD Rating: Class 2 per MIL-STD-750, Method 1020 Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derat.

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