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IS34ML04G081 Datasheet 4gb 3.3v X8 Nand Flash Memory

Manufacturer: ISSI (now Infineon)

Overview: IS34ML04G081 IS35ML04G081 4Gb SLC-1b ECC 3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE 4Gb(x8) 3.

General Description

The IS34/35ML4G081 is a 512Mx8bit with spare 16Mx8bit capacity.

The device is offered in 3.3V Vcc Power Supply.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Key Features

  • Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell.
  • Highest performance - Read Performance - Random Read: 25us (Max. ) - Serial Access: 25ns (Max. ) - Write Performance - Program time: 400us - typical - Block Erase time: 3ms.
  • typical.
  • Low Power with Wide Temp. Ranges - Single 3.3V (2.7V to 3.6V.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS34ML04G084 4Gb(x8) 3.3V NAND FLASH MEMORY
IS34ML04G088 4Gb SLC-8b ECC
IS34ML04G0168 4Gb SLC-8b ECC
IS34ML01G081 1Gb (x8) 3.3V NAND FLASH MEMORY
IS34ML01G084 1Gb(x8) 3.3V NAND FLASH MEMORY
IS34ML02G084 2Gb(x8) 3.3V NAND FLASH MEMORY
IS34MC01GA08 3.3V 1Gb SLC NAND Flash Memory
IS34MC01GA16 3.3V 1Gb SLC NAND Flash Memory
IS34MW01G084 1Gb (x8/x16) 1.8V NAND FLASH MEMORY
IS34MW01G164 1Gb (x8/x16) 1.8V NAND FLASH MEMORY

IS34ML04G081 Distributor