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Integrated Silicon Solution Electronic Components Datasheet

IS39LV040 Datasheet

3.0 Volt-only CMOS Flash Memory

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IS39LV040 / IS39LV010 / IS39LV512
4Mbit / 1Mbit / 512 Kbit 3.0 Volt-only CMOS Flash Memory
FEATURES
Single Power Supply Operation
- Low voltage range: 2.70 V - 3.60 V
• Memory Organization
- IS39LV040: 512K x 8 (4 Mbit)
- IS39LV010: 128K x 8 (1 Mbit)
- IS39LV512: 64K x 8 (512 Kbit)
• High Performance Read
- 70 ns access time
• Cost Effective Sector/Block Architecture
- Uniform 4 Kbyte sectors
- Uniform 64 Kbyte blocks (sector group - except
IS39LV512)
• Data# Polling and Toggle Bit Features
• Hardware Data Protection
• Automatic Erase and Byte Program
- Build-in automatic program verification
- Typical 16 µs/byte programming time
- Typical 55 ms sector/block/chip erase time
• Low Power Consumption
- Typical 4 mA active read current
- Typical 8 mA program/erase current
- Typical 0.1 µA CMOS standby current
• High Product Endurance
- 100,000 program/erase cycles per single sector
- Minimum 20 years data retention
• Industrial Standard Pin-out and Packaging
- 32-pin (8 mm x 14 mm) VSOP
- 32-pin PLCC
- Optional lead-free (Pb-free) package
• Operation temperature range
- IS39LV040/010/512 0oC~+85oC
GENERAL DESCRIPTION
The IS39LV040/010/512 are 4 Mbit / 1 Mbit / 512 Kbit 3.0 Volt-only Flash Memories. These devices are designed
to use a single low voltage, range from 2.70 Volt to 3.60 Volt, power supply to perform read, erase and program
operations. The 12.0 Volt VPP power supply for program and erase operations are not required. The devices can
be programmed in standard EPROM programmers as well.
The memory array of I S39LV512 is divided into uniform 4 Kbyte sectors for data or code storage. The memory
arrays of IS39LV010/040 are divided into uniform 4 Kbyte sectors or uniform 64 Kbyte blocks (sector group -
consists of sixteen adjacent sectors). The sector or block erase feature allows users to flexibly erase a memory
area as small as 4 Kbyte or as large as 64 Kbyte by one single erase operation without affecting the data in
others. The chip erase feature allows the whole memory array to be erased in one single erase operation. The
devices can be progr ammed on a byte-by-byte basis after performing the erase operation.
The devices have a s tandard microprocessor interface as well as a JEDEC standard pin-out/command set. The
program operation is executed by issuing the program command code into command register. The internal control
liossguicinagutthoemcahtiicpaellyrahs aen, dblleosckth, eorpsreocgtroarmemrainseg
voltage ramp-up and timing. The erase
command code into command register.
operation is
The internal
executed by
control logic
automatically handle s the erase voltage ramp-up and timing. The preprogramming on the array which has not
been programmed is not required before an erase operation. The devices offer Data# Polling and Toggle Bit
functions,
Polling on
tIh/Oe7pororgthree sTsoogrgcleomBipt loentioIn/Oo6f.
program
and
erase
operations
can
be
detected
by
reading
the
Data#
The IS39LV040/010/5 12 are manufactured on pFLASH™’s advanced nonvolatile CMOS technology. The devices
are offered in 32-pin VSOP and PLCC packages with 70 ns access time.
Integrated Silicon Solution, Inc. — www.issi.com 1
Rev. B
07/29/2015


Integrated Silicon Solution Electronic Components Datasheet

IS39LV040 Datasheet

3.0 Volt-only CMOS Flash Memory

No Preview Available !

CONNECTION DIAGRAMS
IS39LV040 / IS39LV010 / IS39LV512
I S 3 9 L V 0 4 0 I S 3 9 L V 0 10 I S 3 9 L V 5 12
A7 A7 A7
A6 A6 A6
A5 A5 A5
A4 A4 A4
A3 A3 A3
A2 A2 A2
A1 A1 A1
A0 A0 A0
I/O0 I/O0 I/O0
5
43
2 1 32 31 30 29
6 28
7 27
8 26
9 25
10 24
11 23
12 22
13 21
14 15 16 17 18 19 20
I S 3 9 L V 5 12 I S 3 9 L V 0 10 I S 3 9 L V 0 4 0
A14 A14
A14
A13 A13
A13
A8 A8
A9 A9
A11 A11
A8
A9
A11
OE# OE#
A10 A10
OE#
A10
CE# CE#
I/O7 I/O7
CE#
I/O7
32-Pin PLCC
IS39LV040 IS39LV010 IS39LV512
A11
A9
A8
A13
A14
A17
WE#
VCC
A18
A16
A15
A12
A7
A6
A5
A4
A11
A9
A8
A13
A14
NC
WE#
VCC
NC
A16
A15
A12
A7
A6
A5
A4
A11
A9
A8
A13
A14
NC
WE#
VCC
NC
NC
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-Pin VSOP
IS39LV512 IS39LV010 IS39LV040
32 OE# OE# OE#
31 A10 A10 A10
30 CE# CE# CE#
29 I/O7 I/O7 I/O7
28 I/O6 I/O6 I/O6
27 I/O5 I/O5 I/O5
26 I/O4 I/O4 I/O4
25 I/O3 I/O3 I/O3
24 GND GND GND
23 I/O2 I/O2 I/O2
22 I/O1 I/O1 I/O1
21 I/O0 I/O0 I/O0
20
A0 A0
A0
19
A1 A1
A1
18
A2 A2
A2
17
A3 A3
A3
Integrated Silicon Solution, Inc. — www.issi.com 2
Rev. B
07/29/2015


Part Number IS39LV040
Description 3.0 Volt-only CMOS Flash Memory
Maker ISSI
Total Page 22 Pages
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