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IS41C16256 Datasheet

Manufacturer: ISSI (now Infineon)

This datasheet includes multiple variants, all published together in a single manufacturer document.

IS41C16256 datasheet preview

Datasheet Details

Part number IS41C16256
Datasheet IS41C16256 IS41LV16256 Datasheet (PDF)
File Size 141.73 KB
Manufacturer ISSI (now Infineon)
Description 256K x 16 (4-MBIT) DYNAMIC RAM
IS41C16256 page 2 IS41C16256 page 3

IS41C16256 Overview

The ISSI IS41C16256 and IS41LV16256 are 262,144 x 16-bit high-performanceCMOSDynamicRandomAccessMemory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word.

IS41C16256 Key Features

  • TTL patible inputs and outputs
  • Refresh Interval: 512 cycles/8 ms
  • Refresh Mode : RAS-Only, CAS-before-RAS
  • JEDEC standard pinout
  • Single power supply
  • Byte Write and Byte Read operation via two CAS
  • Extended Temperature Range -30oC to 85oC
  • Industrail Temperature Range -40oC to 85oC

IS41C16256A from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
Integrated Silicon Solution Logo IS41C16256A 256K x 16 (4-MBIT) DYNAMIC RAM Integrated Silicon Solution
ISSI (now Infineon) logo - Manufacturer

More Datasheets from ISSI (now Infineon)

See all ISSI (now Infineon) datasheets

Part Number Description
IS41C16128 128K x 16 (2-MBIT) DYNAMIC RAM
IS41LV16256 256K x 16 (4-MBIT) DYNAMIC RAM
IS41LV32256 EDO DYNAMIC RAM
IS41LV44052B 4M x 4 (16-MBIT) DYNAMIC RAM
IS42R16160D 256-MBIT SYNCHRONOUS DRAM
IS42R16320D 512Mb SDRAM
IS42R16320F 512Mb SDRAM
IS42R32160D 512Mb SDRAM
IS42R32160F 512Mb SDRAM
IS42R83200D 256-MBIT SYNCHRONOUS DRAM

IS41C16256 Distributor

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