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IS42S16800B - 8Meg x16 128-MBIT SYNCHRONOUS DRAM

General Description

A0-A11 A0-A9 BA0, BA1 DQ0 to DQ7 CLK CKE CS RAS CAS Row Address Input Column Address Input Bank Select Address Data I/O System Clock Input Clock Enable Chip Select Row Address Strobe Command Column Address Strobe Command WE DQM VDD Vss VDDQ VssQ NC Write Enable Data Input/Output Mask Power Ground P

Key Features

  • Clock frequency: 167, 143, 133 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access/precharge.
  • Power supply IS42S81600B IS42S16800B.
  • LVTTL interface.
  • Programmable burst length.
  • (1, 2, 4, 8, full page) www. DataSheet4U. com.

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Full PDF Text Transcription for IS42S16800B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IS42S16800B. For precise diagrams, and layout, please refer to the original PDF.

IS42S81600B IS42S16800B 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM ISSI MAY 2006 ® FEATURES • Clock frequency: 167, 143, 133 MHz • Fully synchronous; all signals refer...

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ck frequency: 167, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply IS42S81600B IS42S16800B • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) www.DataSheet4U.com OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows. VDDQ VDD 3.3V 3.3V 3.3V 3.

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