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IS42S32200E - SYNCHRONOUS DYNAMIC RAM

General Description

The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits.

Internally configured as a quad-bank DRAM with a synchronous interface.

Each 16,777,216-bit bank is organized as 2,048 rows by 256 columns by 32 bits.

Key Features

  • Clock frequency: 200, 166, 143, 133 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access/precharge.
  • Single 3.3V power supply.
  • LVTTL interface.
  • Programmable burst length: (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/Interleave.
  • Self refresh modes.
  • 4096 refresh cycles every 16ms (A2 grade) or 64ms (Commercia, Industrial, A1 grade).

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Full PDF Text Transcription for IS42S32200E (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IS42S32200E. For precise diagrams, and layout, please refer to the original PDF.

IS42S32200E IS45S32200E 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM AUGUST 2009 FEATURES • Clock frequency: 200, 166, 143, 133 MHz • Fully synchronous...

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FEATURES • Clock frequency: 200, 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single 3.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS42S32200 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32200L 64-MBIT SYNCHRONOUS DYNAMIC RAM
IS42S32200N 64-MBIT SYNCHRONOUS DYNAMIC RAM
IS42S32160D 512Mb SDRAM
IS42S32160F 512Mb SDRAM
IS42S32400E 128Mb SYNCHRONOUS DRAM
IS42S32400F 4M x 32 128Mb SYNCHRONOUS DRAM
IS42S32800 2M Words x 32 Bits x 4 Banks (256-Mbit) Synchronous DRAM
IS42S32800G 256Mb SYNCHRONOUS DRAM
IS42S32800J 256Mb SYNCHRONOUS DRAM