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IS42SM16160E

Manufacturer: ISSI (now Infineon)
IS42SM16160E datasheet preview

Datasheet Details

Part number IS42SM16160E
Datasheet IS42SM16160E-ISSI.pdf
File Size 554.56 KB
Manufacturer ISSI (now Infineon)
Description 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42SM16160E page 2 IS42SM16160E page 3

IS42SM16160E Overview

These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth.

IS42SM16160E Key Features

  • JEDEC standard 3.3V, 2.5V, 1.8V power supply
  • Auto refresh and self refresh
  • All pins are patible with LVCMOS interface
  • 8K refresh cycle / 64ms
  • Programmable Burst Length and Burst Type
  • 1, 2, 4, 8 or Full Page for Sequential Burst
  • 4 or 8 for Interleave Burst
  • Programmable CAS Latency : 2,3 clocks
  • All inputs and outputs referenced to the positive edge of the system clock
  • Data mask function by DQM
ISSI (now Infineon) logo - Manufacturer

More Datasheets from ISSI (now Infineon)

See all ISSI (now Infineon) datasheets

Part Number Description
IS42SM16200C 1M x 16Bits x 2Banks Low Power Synchronous DRAM
IS42SM16200D 1M x 16Bits x 2Banks Low Power Synchronous DRAM
IS42SM16400G 1M x 16Bits x 4Banks Low Power Synchronous DRAM
IS42SM16400K 1M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42SM16800E 128Mb Mobile Synchronous DRAM
IS42SM32100C 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS42SM32100D 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS42SM32160C 512Mb Mobile Synchronous DRAM
IS42SM32160E 4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42SM32200G 512K x 32Bits x 4Banks Low Power Synchronous DRAM

IS42SM16160E Distributor

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