IS42SM32100C - 512K x 32Bits x 2Banks Low Power Synchronous DRAM

ISSI (now Infineon)

Datasheet Details

Part number	IS42SM32100C
Manufacturer	ISSI (now Infineon)
File Size	1.85 MB
Description	512K x 32Bits x 2Banks Low Power Synchronous DRAM
Datasheet	IS42SM32100C Datasheet

These IS42SM/RM/VM32100C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits.

These products are offering fully synchronous operation and are referenced to a positive edge of the clock.

All inputs and outputs are synchronized with the rising edge of the clock input.

IS42SM32100C IS42RM32100C IS42VM32100C 512K x 32Bits x 2Banks Low Power Synchronous.

JEDEC standard 3.3V, 2.5V, 1.8V power supply.
Auto refresh and self refresh.
All pins are compatible with LVCMOS interface.
4K refresh cycle / 64ms.
Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst.
Programmable CAS Latency : 2,3 clocks.
Programmable Driver Strength Control - Full Strength or 1/2, 1/4, 1/8 of Full Strength.
Deep Power Down Mode.

Part Number	Description
IS42SM32100D	512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS42SM32160C	512Mb Mobile Synchronous DRAM
IS42SM32160E	4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42SM32200G	512K x 32Bits x 4Banks Low Power Synchronous DRAM
IS42SM32200K	512K x 32Bits x 4Banks Mobile Synchronous DRAM
IS42SM32200M	512K x 32Bits x 4Banks Mobile Synchronous DRAM
IS42SM32400E	128Mb Mobile Synchronous DRAM
IS42SM32400G	1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42SM32400H	1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42SM32800E	2M x 32Bits x 4Banks Mobile Synchronous DRAM