IS42VM32200M - 512K x 32Bits x 4Banks Mobile Synchronous DRAM

ISSI (now Infineon)

Datasheet Details

Part number	IS42VM32200M
Manufacturer	ISSI (now Infineon)
File Size	856.23 KB
Description	512K x 32Bits x 4Banks Mobile Synchronous DRAM
Datasheet	IS42VM32200M Datasheet

These IS42SM/RM/VM32200M are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits.

These products are offering fully synchronous operation and are referenced to a positive edge of the clock.

All inputs and outputs are synchronized with the rising edge of the clock input.

IS42/45SM/RM/VM32200M 512K x 32Bits x 4Banks Mobile Synchronous.

JEDEC standard 3.3V, 2.5V, 1.8V power supply.
Auto refresh and self refresh.
All pins are compatible with LVCMOS interface.
4K refresh cycle / 64ms.
Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst.
Programmable CAS Latency : 2,3 clocks.
All inputs and outputs referenced to the positive edge of the system clock.
Data mask function by DQM.
Internal 4.

Part Number	Description
IS42VM32200K	512K x 32Bits x 4Banks Mobile Synchronous DRAM
IS42VM32100C	512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS42VM32100D	512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS42VM32160D	4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42VM32160E	4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42VM32400E	128Mb Mobile Synchronous DRAM
IS42VM32400F	1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42VM32400G	1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42VM32400H	1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42VM32800E	2M x 32Bits x 4Banks Mobile Synchronous DRAM