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IS43LR16128B Datasheet

Manufacturer: ISSI (now Infineon)

This datasheet includes multiple variants, all published together in a single manufacturer document.

IS43LR16128B datasheet preview

Datasheet Details

Part number IS43LR16128B
Datasheet IS43LR16128B IS46LR32640B Datasheet (PDF)
File Size 2.70 MB
Manufacturer ISSI (now Infineon)
Description 2Gb Mobile DDR SDRAM
IS43LR16128B page 2 IS43LR16128B page 3

IS43LR16128B Overview

This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a 16-bit or 32-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins.

IS43LR16128B Key Features

  • JEDEC standard 1.8V power supply
  • VDD = 1.8V, VDDQ = 1.8V
  • Four internal banks for concurrent operation
  • MRS cycle with address key programs
  • CAS latency 2, 3 (clock)
  • Burst length (2, 4, 8)
  • Burst type (sequential & interleave)
  • Fully differential clock inputs (CK, /CK)
  • All inputs except data & DM are sampled at the rising edge of the system clock
  • Data I/O transaction on both edges of data strobe
ISSI (now Infineon) logo - Manufacturer

More Datasheets from ISSI (now Infineon)

See all ISSI (now Infineon) datasheets

Part Number Description
IS43LR16160F 4M x 16Bits x 4Banks Mobile DDR SDRAM
IS43LR16160G 4M x 16Bits x 4Banks Mobile DDR SDRAM
IS43LR16200C 1M x 16Bits x 2Banks Mobile DDR SDRAM
IS43LR16200D 1M x 16Bits x 2Banks Mobile DDR SDRAM
IS43LR16320B 8M x 16Bits x 4Banks Mobile DDR SDRAM
IS43LR16320C 8M x 16Bits x 4Banks Mobile DDR SDRAM
IS43LR16320D 8M x 16Bits x 4Banks Mobile DDR SDRAM
IS43LR16400B 1M x 16Bits x 4Banks Mobile DDR SDRAM
IS43LR16400C 1M x 16Bits x 4Banks Mobile DDR SDRAM
IS43LR16640A 16M x 16Bits x 4Banks Mobile DDR SDRAM

IS43LR16128B Distributor

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