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IS43LR16160G Datasheet 4M x 16Bits x 4Banks Mobile DDR SDRAM

Manufacturer: ISSI (now Infineon)

Download the IS43LR16160G datasheet PDF. This datasheet also includes the IS46LR16160G variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IS46LR16160G-ISSI.pdf) that lists specifications for multiple related part numbers.

General Description

The IS43/46LR16160G is 268,435,456 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits.

This product uses a double-data-rate architecture to achieve high-speed operation.

The Data Input/ Output signals are transmitted on a 16-bit bus.

Overview

IS43/46LR16160G 4M x 16Bits x 4Banks Mobile DDR SDRAM.

Key Features

  • JEDEC standard 1.8V power supply.
  • VDD = 1.8V, VDDQ = 1.8V.
  • Four internal banks for concurrent operation.
  • MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave).
  • Fully differential clock inputs (CK, /CK).
  • All inputs except data & DM are sampled at the rising edge of the system clock.
  • Data I/O transaction on both edges of data strobe.
  • Bidirectional da.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS43LR16160F 4M x 16Bits x 4Banks Mobile DDR SDRAM
IS43LR16128B 2Gb Mobile DDR SDRAM
IS43LR16200C 1M x 16Bits x 2Banks Mobile DDR SDRAM
IS43LR16200D 1M x 16Bits x 2Banks Mobile DDR SDRAM
IS43LR16320B 8M x 16Bits x 4Banks Mobile DDR SDRAM
IS43LR16320C 8M x 16Bits x 4Banks Mobile DDR SDRAM
IS43LR16320D 8M x 16Bits x 4Banks Mobile DDR SDRAM
IS43LR16400B 1M x 16Bits x 4Banks Mobile DDR SDRAM
IS43LR16400C 1M x 16Bits x 4Banks Mobile DDR SDRAM
IS43LR16640A 16M x 16Bits x 4Banks Mobile DDR SDRAM