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Integrated Silicon Solution Electronic Components Datasheet

IS43LR16400C Datasheet

1M x 16Bits x 4Banks Mobile DDR SDRAM

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IS43/46LR16400C
1M x 16Bits x 4Banks Mobile DDR SDRAM
Description
The IS43/46LR16400C is 67,108,864 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 16
bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a
16-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words
per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The
data paths are internally pipelined and 2n-bits prefetched to achieve very high bandwidth. All input and output voltage levels are compatible
with LVCMOS.
Features
• JEDEC standard 1.8V power supply.
VDD = 1.8V, VDDQ = 1.8V
Four internal banks for concurrent operation
• MRS cycle with address key programs
- CAS latency 2, 3 (clock)
- Burst length (2, 4, 8, 16)
- Burst type (sequential & interleave)
• Fully differential clock inputs (CK, /CK)
• All inputs except data & DM are sampled at the rising
edge of the system clock
• Data I/O transaction on both edges of data strobe
• Bidirectional data strobe per byte of data (DQS)
DM for write masking only
• Edge aligned data & data strobe output
• Center aligned data & data strobe input
64ms refresh period (4K cycle)
• Auto & self refresh
Concurrent Auto Precharge
Maximum clock frequency up to 200MHZ
Maximum data rate up to 400Mbps/pin
Power Saving support
- PASR (Partial Array Self Refresh)
- Auto TCSR (Temperature Compensated Self Refresh)
- Deep Power Down Mode
- Programmable Driver Strength Control by Full Strength
or ¾, ½, ¼, 1/8 of Full Strength
• LVCMOS compatible inputs/outputs
• 60-Ball FBGA package
Copyright © 2015 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its
products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services
described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information
and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or
malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or
effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to
its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Rev. A | Nov. 2015
www.issi.com - dram@issi.com
1


Integrated Silicon Solution Electronic Components Datasheet

IS43LR16400C Datasheet

1M x 16Bits x 4Banks Mobile DDR SDRAM

No Preview Available !

Figure1: 60Ball FBGA Ball Assignment
IS43/46LR16400C
12
3
4 56
7
8
9
A VSS
DQ15 VSSQ
VDDQ DQ0
VDD
B VDDQ DQ13 DQ14
DQ1 DQ2 VSSQ
C VSSQ DQ11 DQ12
DQ3 DQ4 VDDQ
D VDDQ DQ9 DQ10
DQ5 DQ6 VSSQ
E VSSQ UDQS DQ8
DQ7 LDQS VDDQ
F VSS
UDM
NC
NC LDM VDD
G CKE CK /CK
/WE /CAS /RAS
H A9 A11 NC
/CS BA0 BA1
J A6 A7 A8
A10 A0
A1
K VSS
A4
A5
A2 A3 VDD
[Top View]
Rev. A | Nov. 2015
www.issi.com - dram@issi.com
2


Part Number IS43LR16400C
Description 1M x 16Bits x 4Banks Mobile DDR SDRAM
Maker ISSI
Total Page 30 Pages
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