• Part: IS43LR32640B
  • Description: 2Gb Mobile DDR SDRAM
  • Manufacturer: ISSI
  • Size: 2.70 MB
Download IS43LR32640B Datasheet PDF
ISSI
IS43LR32640B
Description SEPTEMBER 2022 The IS43/46LR16128B/32640B is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 128Meg words of 16bits or 64Meg words of 32bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a 16-bit or 32-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 2n-bits prefetched to achieve very high bandwidth. All input and output voltage levels are patible with LVCMOS. Features - JEDEC standard 1.8V power supply. - VDD = 1.8V, VDDQ = 1.8V - Four internal banks for concurrent operation - MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8) - Burst...