IS43QR16256B
Key Features
- Standard Voltage : VDD = VDDQ = 1.2V, VPP=2.5V
- High speed data transfer rates with system frequency up to 2666 Mbps
- Data Integrity - Auto Self Refresh (ASR) by DRAM built-in TS - Auto Refresh and Self Refresh Modes
- DRAM access bandwidth - Separated IO gating structures by Bank Groups - Self Refresh Abort - Fine Granularity Refresh
- Signal Synchronization - Write Leveling via MR settings - Read Leveling via MPR
- Reliability & Error Handling - Command/Address Parity - Data bus Write CRC - MPR readout - Boundary Scan (x16 only)
- Speed Grade (CL-TRCD-TRP) - 2400Mbps / 16-16-16 (- 083R) - 2666Mbps/ 18-18-18 (-075U)
- Signal Integrity - Internal VREFDQ Training - Read Preamble Training - Gear Down Mode - Per DRAM Adressability - Configurable DS for system compatibility - Configurable On-Die Termination - Data bus Inversion (DBI) - ZQ Calibration for DS/ODT impedance accuracy via external ZQ pad (240 ohm +/- 1%)
- Power Saving and efficiency - POD with VDDQ termination - Command/Address Latency (CAL) - Maximum Power Saving - Low power Auto Self Refresh (LPASR)
- Operating Temperature - Commercial (Tc = 0oC to +95 oC) - Industrial (Tc = -40oC to +95oC) - Automotive A1 (Tc = - 40oC to +95oC) - Automotive A2 (Tc = - 40oC to +105oC) - Automotive A3 (Tc = - 40oC to +125oC)
