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IS43TR16256ECL Datasheet 4Gb DDR3 SDRAM

Manufacturer: ISSI (now Infineon)

Download the IS43TR16256ECL datasheet PDF. This datasheet also includes the IS46TR16256EC variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IS46TR16256EC-ISSI.pdf) that lists specifications for multiple related part numbers.

Overview

IS43/46TR16256EC, IS43/46TR16256ECL, IS43/46TR85120EC, IS43/46TR85120ECL 512Mx8, 256Mx16 4Gb DDR3 SDRAM with On-Chip.

Key Features

  • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V.
  • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V.
  • 8 internal banks for concurrent operation.
  • 8n-Bit pre-fetch architecture.
  • Programmable CAS Latency.
  • Programmable Additive Latency: 0, CL-1,CL-2.
  • Programmable CAS WRITE latency (CWL) based on tCK.
  • Programmable Burst Length: 4 and 8.
  • Programmable Burst Sequence: Sequential or Interleave.