IS43TR16256ECL Datasheet | ISSI

IS43/46TR16256EC, IS43/46TR16256ECL, IS43/46TR85120EC, IS43/46TR85120ECL 512Mx8, 256Mx16 4Gb DDR3 SDRAM with On-Chip ECC Features - Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V - Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward patible to 1.5V - 8 internal banks for concurrent operation - 8n-Bit pre-fetch architecture - Programmable CAS Latency - Programmable Additive Latency: 0, CL-1,CL-2 - Programmable CAS WRITE latency (CWL) based on t CK - Programmable Burst Length: 4 and 8 - Programmable Burst Sequence: Sequential or Interleave - BL switch on the fly - Auto Self Refresh(ASR) - Self Refresh Temperature(SRT) - Refresh Interval: 7.8 µs (8192 cycles/64 ms) Tc= -40°C to 85°C 3.9 µs (8192 cycles/32 ms) Tc= 85°C to 95°C 1.95 µs (8192 cycles/16 ms) Tc= 95°C to 105°C 0.97 µs (8192 cycles/8 ms) Tc= 105°C to 115°C 0.488 µs (8192 cycles/4 ms) Tc= 115°C to 125°C - Partial Array Self Refresh - Asynchronous RESET pin JANUARY 2024 - TDQS (Termination Data Strobe) supported (x8 only) - OCD (Off-Chip Driver Impedance Adjustment) - Dynamic ODT (On-Die Termination) - Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω) - Write Leveling - Up to 200 MHz in DLL off mode - Operating temperature: mercial (TC = 0°C to +95°C) Industrial (TC = -40°C to +95°C) Automotive, A1 (TC = -40°C to +95°C) Automotive, A2 (TC = -40°C to +105°C) Automotive, A25 (TC = -40°C to +115°C) Automotive, A3 (TC = -40°C to +125°C) ECC Features - ECC Single bit error protection (per...