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IS45S16400J - SYNCHRONOUS DYNAMIC RAM

General Description

The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits.

Internally configured as a quad-bank DRAM with a synchronous interface.

Each 16,777,216-bit bank is organized as 4,096 rows by 256 columns by 16 bits.

Key Features

  • Clock frequency: 200, 166, 143, 133 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access/precharge.
  • Single 3.3V power supply.
  • LVTTL interface.
  • Programmable burst length.
  • (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/Interleave.
  • Self refresh modes.
  • Auto refresh (CBR).
  • 4096 refresh cycles every 64 ms (Com, Ind, A1 grade) or 1.

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Full PDF Text Transcription for IS45S16400J (Reference)

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IS42S16400J IS45S16400J 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM FEBRUARY 2022 FEATURES • Clock frequency: 200, 166, 143, 133 MHz • Fully synchron...

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22 FEATURES • Clock frequency: 200, 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single 3.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Integrated Silicon Solution Logo IS45S16400C1 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution
Integrated Silicon Solution Logo IS45S16400E 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution
Integrated Silicon Solution Logo IS45S16400F 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution

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