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IS46DR81280B - 1Gb DDR2 SDRAM

General Description

DDR2 SDRAM (128Mx8) TW-BGA Ball-out (Top-View) (8.00mm x 10.50mm) Symbol CK, CK# CKE CS# RAS#,CAS#,WE# A[13:0] BA[2:0] DQ[7:0] DQS, DQS# RDQS, RDQS# DM VDD VSS VDDQ VSSQ VREF VDDL VSSDL ODT NC Description Input clocks Clock enable Chip Select Command control pins Address Bank Address I/O Data Stro

Key Features

  • Clock frequency up to 400MHz.
  • 8 internal banks for concurrent operation.
  • 4-bit prefetch architecture.
  • Programmable CAS Latency: 3, 4, 5, 6 and 7.
  • Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6.
  • Write Latency = Read Latency-1.
  • Programmable Burst Sequence: Sequential or Interleave.
  • Programmable Burst Length: 4 and 8.
  • Automatic and Controlled Precharge Command.
  • Power Down Mode.
  • Auto Refresh and Self Refresh.
  • Refresh Interval: 7.8 .

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS46DR81280C DDR2 DRAM
IS46DR81280D 128Mx8 DDR2 DRAM
IS46DR81280DL 128Mx8 DDR2 DRAM
IS46DR82560C DDR2 DRAM
IS46DR83200B DDR2 DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS43/46DR81280B(L), IS43/46DR16640B(L) 1Gb (x8, x16) DDR2 SDRAM MARCH 2015 FEATURES  Clock frequency up to 400MHz  8 internal banks for concurrent operation  4-bit prefetch architecture  Programmable CAS Latency: 3, 4, 5, 6 and 7  Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6  Write Latency = Read Latency-1  Programmable Burst Sequence: Sequential or Interleave  Programmable Burst Length: 4 and 8  Automatic and Controlled Precharge Command  Power Down Mode  Auto Refresh and Self Refresh  Refresh Interval: 7.