IS46LR16400B - 1M x 16Bits x 4Banks Mobile DDR SDRAM

ISSI (now Infineon)

Datasheet Details

Part number	IS46LR16400B
Manufacturer	ISSI (now Infineon)
File Size	1.13 MB
Description	1M x 16Bits x 4Banks Mobile DDR SDRAM
Datasheet	IS46LR16400B Datasheet

The IS43/46LR16400B is 67,108,864 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 16 bits.

This product uses a double-data-rate architecture to achieve high-speed operation.

The Data Input/ Output signals are transmitted on a 16-bit bus.

IS43/46LR16400B 1M x 16Bits x 4Banks Mobile DDR SDRAM.

JEDEC standard 1.8V power supply.
VDD = 1.8V, VDDQ = 1.8V.
Four internal banks for concurrent operation.
MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave).
Fully differential clock inputs (CK, /CK).
All inputs except data & DM are sampled at the rising edge of the system clock.
Data I/O transaction on both edges of data strobe.
Bidirectional d.

Part Number	Description
IS46LR16400C	1M x 16Bits x 4Banks Mobile DDR SDRAM
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