• Part: IS46QR85120B
  • Description: 512Mb x 8 4Gb DDR4 SDRAM
  • Manufacturer: ISSI
  • Size: 5.44 MB
Download IS46QR85120B Datasheet PDF
ISSI
IS46QR85120B
FEATURES - Standard Voltage : VDD = VDDQ = 1.2V, VPP=2.5V - High speed data transfer rates with system frequency up to 2666 Mbps - Data Integrity - Auto Self Refresh (ASR) by DRAM built-in TS - Auto Refresh and Self Refresh Modes - DRAM access bandwidth - Separated IO gating structures by Bank Groups - Self Refresh Abort - Fine Granularity Refresh - Signal Synchronization - Write Leveling via MR settings - Read Leveling via MPR - Reliability & Error Handling - mand/Address Parity - Data bus Write CRC - MPR readout - Boundary Scan (x16 only) - Speed Grade (CL-TRCD-TRP) - 2400Mbps / 16-16-16 (- 083R) - 2666Mbps/ 18-18-18 (-075U) - Signal Integrity - Internal VREFDQ Training - Read Preamble Training - Gear Down Mode - Per DRAM Adressability - Configurable DS for system patibility - Configurable On-Die Termination - Data bus Inversion (DBI) - ZQ Calibration for DS/ODT impedance accuracy via external ZQ pad (240 ohm +/- 1%) - Power Saving and efficiency - POD with VDDQ termination -...