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IS46TR16128B - 2Gb DDR3 SDRAM

Key Features

  • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V.
  • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V.
  • High speed data transfer rates with system frequency up to 1066 MHz.
  • 8 internal banks for concurrent operation.
  • 8n-Bit pre-fetch architecture.
  • Programmable CAS Latency.
  • Programmable Additive Latency: 0, CL-1,CL-2.
  • Programmable CAS WRITE latency (CWL) based on tCK.
  • Programmable Burst Length: 4 and 8.
  • Programmable Bu.

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Full PDF Text Transcription for IS46TR16128B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IS46TR16128B. For precise diagrams, and layout, please refer to the original PDF.

IS43/46TR16128B, IS43/46TR16128BL, IS43/46TR82560B, IS43/46TR82560BL 256Mx8, 128Mx16 2Gb DDR3 SDRAM FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltag...

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FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 1066 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable CAS WRITE latency (CWL) based on tCK  Programmable Burst Length: 4 and 8  Programmable Burst Sequence: Sequential or Interleave  BL switch on the fly  Auto Self Refresh(ASR)  Self Refresh Temperature(SRT) FEBRUARY 2018  Refresh Interval: 7.8 us (

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