Download the IS46TR82560B datasheet PDF.
This datasheet also covers the IS46TR16128B variant, as both devices belong to the same 2gb ddr3 sdram family and are provided as variant models within a single manufacturer datasheet.
Key Features
Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V.
Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
- Backward compatible to 1.5V.
High speed data transfer rates with system
frequency up to 1066 MHz.
8 internal banks for concurrent operation.
8n-Bit pre-fetch architecture.
Programmable CAS Latency.
Programmable Additive Latency: 0, CL-1,CL-2.
Programmable CAS WRITE latency (CWL) based
on tCK.
Full PDF Text Transcription for IS46TR82560B (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IS46TR82560B. For precise diagrams, and layout, please refer to the original PDF.
IS43/46TR16128B, IS43/46TR16128BL, IS43/46TR82560B, IS43/46TR82560BL 256Mx8, 128Mx16 2Gb DDR3 SDRAM FEATURES Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltag...
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FEATURES Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V High speed data transfer rates with system frequency up to 1066 MHz 8 internal banks for concurrent operation 8n-Bit pre-fetch architecture Programmable CAS Latency Programmable Additive Latency: 0, CL-1,CL-2 Programmable CAS WRITE latency (CWL) based on tCK Programmable Burst Length: 4 and 8 Programmable Burst Sequence: Sequential or Interleave BL switch on the fly Auto Self Refresh(ASR) Self Refresh Temperature(SRT) FEBRUARY 2018 Refresh Interval: 7.8 us (
IS46TR82560B Datasheet
