IS52VM32400H Datasheet 1M x 32Bits x 4Banks Mobile Synchronous DRAM

Manufacturer: ISSI (now Infineon)

Download the IS52VM32400H datasheet PDF. This datasheet also includes the IS42SM32400H variant, as both parts are published together in a single manufacturer document.

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IS52VM32400H 1m x 32bits x 4banks mobile synchronous dram by ISSI (now Infineon) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IS42SM32400H-ISSI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IS52VM32400H
Manufacturer	ISSI (now Infineon)
File Size	611.31 KB
Description	1M x 32Bits x 4Banks Mobile Synchronous DRAM
Datasheet	IS52VM32400H Datasheet

General Description

These IS42/45SM/RM/VM32400H are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits.

These products are offering fully synchronous operation and are referenced to a positive edge of the clock.

All inputs and outputs are synchronized with the rising edge of the clock input.

Overview

IS42/45SM/RM/VM32400H Advanced Information 1M x 32Bits x 4Banks Mobile Synchronous.

Key Features

JEDEC standard 3.3V, 2.5V, 1.8V power supply.
Auto refresh and self refresh.
All pins are compatible with LVCMOS interface.
4K refresh cycle / 64ms.
Programmable Burst Length and Burst Type.
1, 2, 4, 8 or Full Page for Sequential Burst.
4 or 8 for Interleave Burst.
Programmable CAS Latency : 2,3 clocks.
All inputs and outputs referenced to the positive edge of the system clock.
Data mask function by DQM.

More Datasheets from ISSI (now Infineon)

Part Number	Description
IS52RM32400H	1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS52SM32400H	1M x 32Bits x 4Banks Mobile Synchronous DRAM