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IS61WV10248EDBLL - 1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

General Description

low power, 1M-word by 8-bit CMOS static RAM.

high-performance CMOS technology.

Key Features

  • High-speed access times: 8, 10, 20 ns.
  • High-performance, low-power CMOS process.
  • Multiple center power and ground pins for greater noise immunity.
  • Easy memory expansion with CE and OE options.
  • CE power-down.
  • Fully static operation: no clock or refresh required.
  • TTL compatible inputs and outputs.
  • Packages available:.
  • 48-ball miniBGA (6mm x 8mm).
  • 44-pin TSOP (Type II).
  • Industrial and Au.

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Full PDF Text Transcription for IS61WV10248EDBLL (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IS61WV10248EDBLL. For precise diagrams, and layout, please refer to the original PDF.

IS61WV10248EDBLL IS64WV10248EDBLL 1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC FEBRUARY 2013 FEATURES • High-speed access times: 8, 10, 20 ns • High-performanc...

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013 FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Packages available: – 48-ball miniBGA (6mm x 8mm) – 44-pin TSOP (Type II) • Industrial and Automotive Temperature Support • Lead-free available DESCRIPTION The ISSI IS61/64WV10248EDBLL are very high-speed, low power, 1M-word by 8-bit CMOS static RAM. The IS61/64WV10248EDBLL are fabricated using ISSI's high-per

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