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IS61WV25616LEBLL Datasheet 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

Manufacturer: ISSI (now Infineon)

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General Description

The ISSI IS61/64WV25616LEBLL are high-speed, low power, 4M bit Latched static RAMs organized as 256K words by 16 bits.

It is fabricated using ISSI's highperformance CMOS technology and implemented ECC function to improve reliability.

This highly reliable process coupled with innovative circuit design techniques including ECC (SEC-DED: Single Error Correcting-Double Error Detecting) yields high-performance and highly reliable devices.

Overview

IS61WV25616LEBLL IS64WV25616LEBLL 256Kx16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM with LATCHED ADDRESS & ECC JULY 2019.

Key Features

  • High-speed access time: 12ns, 15ns.
  • Single power supply.
  • 2.4V-3.6V VDD.
  • Ultra Low Standby Current with ZZ# pin - IZZ = 30uA (typ. ).
  • Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indicates multi-bit error detection.
  • ALE# pin to latch Address & CS# signals.
  • Industrial and Automotive temperature support.
  • Lead-free available.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS61WV25616ALL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616ALS 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616BLL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616BLS 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616EDALL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616EDBLL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25632ALL 256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25632ALS 256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25632BLL 256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25632BLS 256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM