| Title | |
| Description | The ISSI IS61/64WV25616LEBLL are high-speed, low power, 4M bit Latched static RAMs organized as 256K words by 16 bits. It is fabricated using ISSI's highperformance CMOS technology and implemented ECC function to improve reliability. This highly reliable process coupled with innovative circuit design techniques including ECC (SEC-DED: Single Error Correcting-Double Error Detecting) yields high-per... |
| Features |
High-speed access time: 12ns, 15ns Single power supply – 2.4V-3.6V VDD Ultra Low Standby Current with ZZ# pin - IZZ = 30uA (typ.) Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indicates multi-bit error detection ALE# pin to latch Address & CS# signa... |
| Datasheet |
 IS61WV25616LEBLL Datasheet - 795.37KB |
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