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IS61WV51216EEBLL, IS61WV51216EEALL 512K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

IS61WV51216EEBLL Description

IS61WV51216EEALL IS61/64WV51216EEBLL 512Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC AUGUST 2019 KEY .
The ISSI IS61/64WV51216EEALL/BLL are high-speed, low power, 8M bit static RAMs organized as 512K words by 16 bits.

IS61WV51216EEBLL Features

* High-speed access time: 8ns, 10ns, 20ns
* Single power supply
* 1.65V-2.2V VDD (IS61WV51216EEALL)
* 2.4V-3.6V VDD (IS61/64WV51216EEBLL)
* Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2

IS61WV51216EEBLL Applications

* where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IS61WV51216EEBLL, IS61WV51216EEALL. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IS61WV51216EEBLL, IS61WV51216EEALL
Manufacturer
ISSI
File Size
866.18 KB
Datasheet
IS61WV51216EEALL-ISSI.pdf
Description
512K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM
Note
This datasheet PDF includes multiple part numbers: IS61WV51216EEBLL, IS61WV51216EEALL.
Please refer to the document for exact specifications by model.

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512K HIGH SPEED AYNCHRONOUS CMOS STATIC RAM ISSI
ISSI IS61WV51216EEBLL-like datasheet