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IS61WV51216EEBLL - 512K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

Download the IS61WV51216EEBLL datasheet PDF. This datasheet also covers the IS61WV51216EEALL variant, as both devices belong to the same 512k x 16 high speed aynchronous cmos static ram family and are provided as variant models within a single manufacturer datasheet.

Description

The ISSI IS61/64WV51216EEALL/BLL are high-speed, low power, 8M bit static RAMs organized as 512K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability.

Features

  • High-speed access time: 8ns, 10ns, 20ns.
  • Single power supply.
  • 1.65V-2.2V VDD (IS61WV51216EEALL).
  • 2.4V-3.6V VDD (IS61/64WV51216EEBLL).
  • Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indicates 2-bit error detection.
  • Package Available: - 44-pin TSOP (Type II) - 48-pin TSOP (Type I) - 48-ball mini BGA (6mm x 8mm) - 54 pin TSOP (Type II).
  • Three state outputs.
  • Indu.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS61WV51216EEALL-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS61WV51216ALL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV51216BLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV12816DALL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV12816DALS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV12816DBLL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS61WV51216EEALL 512K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM
IS61WV51216EDALL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV51216EDBLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV51232ALL 512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV51232ALS 512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS61WV51216EEALL IS61/64WV51216EEBLL 512Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC AUGUST 2019 KEY FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV51216EEALL) – 2.4V-3.6V VDD (IS61/64WV51216EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction.
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