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IS62WV102416DALL - ULTRA LOW POWER & LOW POWER CMOS STATIC RAM

General Description

The ISSI IS62/65WV102416DALL, IS62/65WV102416DBLL are ULTRA LOW POWER CMOS 16Mbit static RAMs organized as 1M words by 16 bits.

It is fabricated using ISSI's highperformance CMOS technology.

Key Features

  • High-speed access time: 45ns, 55ns.
  • CMOS low power operation.
  • 25 µA (typical) CMOS standby.
  • CMOS for optimum speed and power and TTL compatible interface levels.
  • Single power supply.
  • 1.65V~1.98V VDD (IS62/65WV102416DALL).
  • 2.2V~3.6V VDD (IS62/65WV102416DBLL).
  • Fully static operation: no clock or refresh required.
  • Industrial and Automotive temperature support.

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Full PDF Text Transcription for IS62WV102416DALL (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IS62WV102416DALL. For precise diagrams, and layout, please refer to the original PDF.

IS62/65WV102416DALL IS62/65WV102416DBLL 1Mx16 LOW VOLTAGE, ULTRA LOW POWER & LOW POWER CMOS STATIC RAM JANUARY 2015 KEY FEATURES  High-speed access time: 45ns, 55ns.  C...

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AM JANUARY 2015 KEY FEATURES  High-speed access time: 45ns, 55ns.  CMOS low power operation – 25 µA (typical) CMOS standby  CMOS for optimum speed and power and TTL compatible interface levels  Single power supply – 1.65V~1.98V VDD (IS62/65WV102416DALL) – 2.2V~3.6V VDD (IS62/65WV102416DBLL)  Fully static operation: no clock or refresh required  Industrial and Automotive temperature support DESCRIPTION The ISSI IS62/65WV102416DALL, IS62/65WV102416DBLL are ULTRA LOW POWER CMOS 16Mbit static RAMs organized as 1M words by 16 bits. It is fabricated using ISSI's highperformance CMOS technology.

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