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IS62WV102416EALL - ULTRA LOW POWER CMOS STATIC RAM

General Description

IS65WV102416EALL/BLL are Low Power, 16M bit static RAMs organized as 1024K words by 16bits.

technology.

Key Features

  • High-speed access time: 45ns, 55ns.
  • CMOS low power operation.
  • Operating (typical): - 10.8mW (1.8V), 18mW (3.0V).
  • CMOS Standby (typical): - 48 µW (1.8V), 90 µW (3.0V).
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V.
  • 1.98V Vdd (62/65WV102416EALL).
  • 2.2V--3.6V Vdd (62/65WV102416EBLL).
  • Data control for upper and lower bytes.
  • Industrial and Automotive temperature support BLOCK.

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Full PDF Text Transcription for IS62WV102416EALL (Reference)

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IS62/65WV102416EALL IS62/65WV102416EBLL 1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEBRUARY 2016 KEY FEATURES  High-speed access time: 45ns, 55ns  CMOS low powe...

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2016 KEY FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating (typical): - 10.8mW (1.8V), 18mW (3.0V) – CMOS Standby (typical): - 48 µW (1.8V), 90 µW (3.0V)  TTL compatible interface levels  Single power supply –1.65V—1.98V Vdd (62/65WV102416EALL) – 2.2V--3.6V Vdd (62/65WV102416EBLL)  Data control for upper and lower bytes  Industrial and Automotive temperature support BLOCK DIAGRAM DESCRIPTION The IS62WV102416EALL/BLL and IS65WV102416EALL/BLL are Low Power, 16M bit static RAMs organized as 1024K words by 16bits. It is fabricated using 's high-performance CMOS technology.

📁 Similar Datasheet

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Integrated Silicon Solution Logo IS62WV102416ALL 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
Integrated Silicon Solution Logo IS62WV102416BLL 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution

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