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IS62WV10248EALL - ULTRA LOW POWER CMOS STATIC RAM

General Description

The ISSI IS62WV10248EALL/ IS62WV10248EBLL are high-speed, 8M bit static RAMs organized as 1M words by 8 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access time: 45ns, 55ns.
  • CMOS low power operation.
  • 36 mW (typical) operating.
  • 12 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V-2.2V VDD (62/65WV10248EALL).
  • 2.2V-3.6V VDD (62/65WV10248EBLL).
  • Data control for upper and lower bytes.
  • Automotive temperature (-40oC to +125oC).
  • Lead-free available BLOCK.

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Full PDF Text Transcription for IS62WV10248EALL (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IS62WV10248EALL. For precise diagrams, and layout, please refer to the original PDF.

IS62WV10248EALL/BLL IS65WV10248EALL/BLL 1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM NOVEMBER 2014 KEY FEATURES  High-speed access time: 45ns, 55ns  CMOS low power...

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014 KEY FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating – 12 µW (typical) CMOS standby  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (62/65WV10248EALL) – 2.2V-3.6V VDD (62/65WV10248EBLL)  Data control for upper and lower bytes  Automotive temperature (-40oC to +125oC)  Lead-free available BLOCK DIAGRAM DESCRIPTION The ISSI IS62WV10248EALL/ IS62WV10248EBLL are high-speed, 8M bit static RAMs organized as 1M words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology.

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