IS64WV1288DBLL Datasheet | ISSI

IS63WV1288DALL/DALS IS63WV1288DBLL/DBLS IS64WV1288DBLL/DBLS 128K x 8 HIGH-SPEED CMOS STATIC RAM JUNE 2021 Features HIGH SPEED: (IS63/64WV1288DALL/DBLL) - High-speed access time: 8, 10, 12, 20 ns - Low Active Power: 135 m W (typical) - Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS63/64WV1288DALS/DBLS) - High-speed access time: 25, 35 ns - Low Active Power: 55 m W (typical) - Low Standby Power: 12 µW (typical) CMOS standby - Single power supply - Vdd 1.65V to 2.2V (IS63WV1288DAxx) - Vdd 2.4V to 3.6V (IS63/64WV1288DBxx) - Multiple center power and ground pins for greater noise immunity - Easy memory expansion with CE and OE options - CE power-down - Fully static operation: no clock or refresh required - TTL patible inputs and outputs - Lead-free available DESCRIPTION The ISSI IS63/64WV1288Dxxx is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM. The IS63/64WV1288DBLL is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 25 µW (typical) with CMOS input levels. The IS63/64WV1288DBLL operates from a single Vdd power supply. The IS63/64WV1288Dxxx is available in 32-pin TSOP (Type II), 32-pin s TSOP (Type I), 48-Ball mini BGA (6mm x 8mm) and 32-pin SOJ (300-mil) packages. FUNCTIONAL BLOCK DIAGRAM A0-A16 VDD GND...