IS64WV51216EDBLL ram equivalent, 512k x 16 high-speed asynchronous cmos static ram.
* High-speed access times: 8, 10, 20 ns
* High-performance, low-power CMOS process
* Multiple center power and ground pins for greater
noise immunity
* Ea.
where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system o.
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