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IS64WV51216EDBLL - 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

Download the IS64WV51216EDBLL datasheet PDF. This datasheet also covers the IS61WV51216EDALL variant, as both devices belong to the same 512k x 16 high-speed asynchronous cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

IS61/64WV51216EDBLL are high-speed, 8M-bit static RAMs organized as 512K words by 16 bits.

cated using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access times: 8, 10, 20 ns.
  • High-performance, low-power CMOS process.
  • Multiple center power and ground pins for greater noise immunity.
  • Easy memory expansion with CE and OE options.
  • CE power-down.
  • Fully static operation: no clock or refresh required.
  • TTL compatible inputs and outputs.
  • Single Power Supply.
  • Vdd = 1.65V to 2.2V (IS61WV51216EDALL).
  • Vdd = 2.4V to 3.6V (IS61/64WV51216EDBLL).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS61WV51216EDALL-ISSI.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IS64WV51216EDBLL (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IS64WV51216EDBLL. For precise diagrams, and layout, please refer to the original PDF.

IS61WV51216EDALL IS61/64WV51216EDBLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC JULY 2020 FEATURES • High-speed access times: 8, 10, 20 ns • High-performa...

View more extracted text
2020 FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single Power Supply – Vdd = 1.65V to 2.2V (IS61WV51216EDALL) – Vdd = 2.4V to 3.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
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