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IS64WV6416BLL - 64K x 16 HIGH-SPEED CMOS STATIC RAM

Description

bit static RAM organized as 65,536 words by 16 bits.

technology.

Features

  • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V-3.6V.
  • CMOS low power operation: 50 mW (typical) operating 25 µW (typical) standby.
  • TTL compatible interface levels.
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Automotive Temperature Available.
  • Lead-free available.

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Part Number Description
IS64WV6416DBLL 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS64WV6416BLL IS61WV6416BLL ® Long-term Support World Class Quality 64K x 16 HIGH-SPEED CMOS STATIC RAM APRIL 2019 FEATURES • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V-3.6V • CMOS low power operation: 50 mW (typical) operating 25 µW (typical) standby • TTL compatible interface levels • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Automotive Temperature Available • Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS61/64WV6416BLL is a high-speed, 1,048,576- bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.
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